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Atomically Controlled Epitaxial Growth of Single-Crystalline Germanium Films on a Metallic SilicideYAMADA, Shinya; TANIKAWA, Kohei; MIYAO, Masanobu et al.Crystal growth & design. 2012, Vol 12, Num 10, pp 4703-4707, issn 1528-7483, 5 p.Article

Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallizationTOKO, Kaoru; NAKAO, Isakane; SADOH, Taizoh et al.Solid-state electronics. 2009, Vol 53, Num 11, pp 1159-1164, issn 0038-1101, 6 p.Article

Recent progress of sige heterostructure technologies for novel devicesMIYAO, Masanobu; KANNO, Hiroshi; SADOH, Taizoh et al.Proceedings - Electrochemical Society. 2006, pp 165-179, issn 0161-6374, isbn 1-56677-438-1, 1Vol, 15 p.Conference Paper

Comprehensive study of low temperature (<1000 °C) oxidation process in SiGe/SOI structuresTANAKA, Masanori; OHKA, Tatsuo; SADOH, Taizoh et al.Thin solid films. 2008, Vol 517, Num 1, pp 251-253, issn 0040-6090, 3 p.Conference Paper

Al-induced low-temperature crystallization of Si_{1 ― x}Ge_x (0<x<1) by controlling layer exchange processKUROSAWA, Masashi; SADOH, Taizoh; MIYAO, Masanobu et al.Thin solid films. 2010, Vol 518, issn 0040-6090, S174-S178, SUP1Conference Paper

Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO₂ substratesTOKO, Kaoru; FUKATA, Naoki; NAKAZAWA, Koki et al.Journal of crystal growth. 2013, Vol 372, pp 189-192, issn 0022-0248, 4 p.Article

Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint techniqueTOKO, Kaoru; KANNO, Hiroshi; KENJO, Atsushi et al.Solid-state electronics. 2008, Vol 52, Num 8, pp 1221-1224, issn 0038-1101, 4 p.Article

Low temperature epitaxial growth of Fe₃Si on Si(111) substrate through ultra-thin SiO₂ filmsUEDA, Koji; KUMANO, Mamoru; SADOH, Taizoh et al.Thin solid films. 2008, Vol 517, Num 1, pp 425-427, issn 0040-6090, 3 p.Conference Paper

Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H⁺ irradiation-assisted Ge condensation methodTANAKA, Masanori; KENJO, Atsushi; SADOH, Taizoh et al.Thin solid films. 2008, Vol 517, Num 1, pp 248-250, issn 0040-6090, 3 p.Conference Paper

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Characterization of deep levels in Si-doped In_xAl_1-xAs layers grown by molecular beam epitaxyMALININ, A; TOMOZAWA, H; HASHIZUME, T et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1138-1142, issn 0021-4922, 1Conference Paper

Control of As precipitation in low-temperature GaAs by electronic and isoelectronic delta dopingTZYY MING CHENG; CHUN YEN CHANG; JIN HUA HUANG et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1185-1189, issn 0021-4922, 1Conference Paper

Counter doped N-channel MOSFETs: mobility improvement and reverse short channel effect enhancementPLOEG, E. P. V; NODA, H; UMEDA, K et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 878-881, issn 0021-4922, 1Conference Paper

Disordering of CdZnSe/ZnSe strained layer superlattices by ion implantationYOKOGAWA, T; MERZ, J; LUO, H et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1159-1161, issn 0021-4922, 1Conference Paper

Elastic scattering and depletion effects on current-voltage characteristics of gated resonant tunneling diodesLEE, C.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1236-1240, issn 0021-4922, 1Conference Paper

Electroluminescence of ballistic and phonon emitting electrons in the p-type base of AlGaAs/GaAs HBT structuresFUKAI, Y. K; FURUTA, T; ISHIBASHI, T et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1208-1212, issn 0021-4922, 1Conference Paper

Electron beam patterning mechanism of GaAs oxide mask layers used in in situ electron beam lithographyTANAKA, N; LOPEZ, M; MATSUYAMA, I et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 1194-1198, issn 0021-4922, 1Conference Paper

Extremely high selective etching of porous Si for single etch-stop bond-and-etch-back silicon-on-insulatorSAKAGUCHI, K; SATO, N; YAMAGATA, K et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 842-847, issn 0021-4922, 1Conference Paper

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Numerical prediction for 2 GHz RF amplifier of SOI power MOSFETOMURA, I; NAKAGAWA, A.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 827-830, issn 0021-4922, 1Conference Paper

Photoluminescence from a silicon quantum well formed on separation by implanted oxygen substrateTAKAHASHI, Y; FURUTA, T; ONO, Y et al.Japanese journal of applied physics. 1995, Vol 34, Num 2B, pp 950-954, issn 0021-4922, 1Conference Paper